Publications

2018

Anchor Groups for Graphene‐Porphyrin Single‐Molecule Transistors
B. Limburg, J.O. Thomas, G. Holloway, H. Sadeghi, S. Sangtarash, I. Cheng‐Yi Hou, J. Cremers, A. Narita, K. Müllen, C.J. Lambert, G.A.D. Briggs, J.A. Mol, H.L. Anderson
Adv. Funct. Mater. 2018, 1803629 (2018)

Challenges in fabricating graphene nanodevices for electronic DNA sequencing
J. Fried, J.L. Swett, X. Bian, J.A. Mol
MRS Communications, 1-9. doi:10.1557/mrc.2018.187 (2018)

Low-Frequency Noise in Graphene Tunnel Junctions
P. Puczkarski, Q. Wu, H. Sadeghi, S. Hou, A. Karimi, Y. Sheng, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol
ACS Nano 12(9), 9451 (2018)

Spiro-Conjugated Molecular Junctions: Between Jahn–Teller Distortion and Destructive Quantum Interference
J.K. Sowa, J.A. Mol, G.A.D. Briggs, E.M. Gauger
J. Phys. Chem. Lett. 9(8), 1859 (2018)

Revealing Strain-Induced Effects in Ultrathin Heterostructures at the Nanoscale
S.G. Sarwat, M. Tweedie, B.F. Porter, Y. Zhou, Y. Sheng, J.A. Mol, J.H. Warner, H. Bhaskaran
Nano Lett. 18(4), 2467 (2018)

2017

Environment-Assisted Quantum Transport through Single-Molecule Junctions
J.K. Sowa, J.A. Mol, G.A.D. Briggs, and E.M. Gauger
Phys. Chem. Chem. Phys. 10.1039/c7cp06237k(2017)

Field-Effect Control of Graphene–Fullerene Thermoelectric Nanodevices
P. Gehring, A. Harzheim, J. Spièce, Y. Sheng, G. Rogers, C. Evangeli, A. Mishra, B.J. Robinson, K. Porfyrakis, J.H. Warner, O. V. Kolosov, G.A.D. Briggs, and J.A. Mol
Nano Lett.acs.nanolett.7b03736 (2017)

Double quantum dot memristor
Y. Li, G.W. Holloway, S.C. Benjamin, G.A.D. Briggs, J. Baugh, and J.A. Mol
Phys. Rev. B 96(7), 075446 (2017)

Graphene nanoelectrodes for biomolecular sensing
P. Puczkarski, J.L. Swett, and J.A. Mol
Mater. Res. 32(15), 3002 (2017)

Scaling Limits of Graphene Nanoelectrodes
S.G. Sarwat, P. Gehring, G.R. Hernandez, J.H. Warner, G.A.D. Briggs, J.A. Mol, and H. Bhaskaran
Nano Lett. 17(6), 3688 (2017)

Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors
P. Gehring, J.K. Sowa, J. Cremers, Q. Wu, H. Sadeghi, Y. Sheng, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol
ACS Nano 11 (6), 5325 (2017)

Vibrational effects in charge transport through a molecular double quantum dot
J.K. Sowa, J.A. Mol, G.A.D. Briggs, E.M. Gauger
Phys. Rev. B 95(8), 085423 (2017)

One dimensional transport in silicon nanowire junction-less field effect transistors
M.M. Mirza, F.J. Schupp, J.A. Mol, D.A. MacLaren, G.A.D. Briggs, and D.J. Paul
Sci. Rep. 7, 3004 (2017)

2016

Quantum Interference in Graphene Nanoconstrictions
P. Gehring, H. Sadeghi, S. Sangtarash, C.S. Lau, J. Liu, A. Ardavan, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol
Nano Lett. 16(7), 4210 (2016)

Quantum simulation of the Hubbard model with dopant atoms in silicon
J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg, and S. Rogge
Nature Comm. 7:11342 (2016)

Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon
J. Salfi, J.A. Mol, D. Culcer, and S. Rogge
Phys. Rev. Lett. 116, 246801 (2016)

Interference-based molecular transistors
Y. Li, J.A. Mol, S.C. Benjamin, and G.A.D. Briggs
Sci. Rep. 6, 33686 (2016)

Redox-dependent Franck-Condon blockade and avalanche transport in a graphene-fullerene single-molecule transistor
C.S. Lau, H. Sadeghi, G. Rogers, S. Sangtarash, P. Dallas, K. Porfyrakis, J.H. Warner, C.J. Lambert, G.A.D. Briggs, and J.A. Mol
Nano Lett. 16(1), 170 (2016)

2015

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning
P. Puczkarski, P. Gehring, C.S. Lau, J. Liu, A. Ardavan, J.H. Warner, G.A.D. Briggs, and J.A. Mol
Appl. Phys. Lett. 107, 133105 (2015)

Graphene-porphyrin single-molecule transistors
J.A. Mol, C.S. Lau, W.J.M. Lewis, H. Sadeghi, C. Roche, A. Cnossen, J.H. Warner, C.J. Lambert, H.L. Anderson, and G.A.D. Briggs
Nanoscale 7, 13181 (2015)

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
J.A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J.A. Miwa, G. Klimeck, M.Y. Simmons, and S. Rogge
Appl. Phys Lett. 106, 203110 (2015)

Conductance enlargement in picoscale electroburnt graphene nanojunctions
H. Sadeghi, J.A. Mol, C.S. Lau, G.A.D. Briggs, J. Warner, and C.J. Lambert
Proc. Natl. Acad. Sci. 112, 2658 (2015)

2014

Nanoscale control of graphene electrodes
C.S. Lau, J.A. Mol, J.H.Warner, and G.A.D. Briggs
Phys. Chem. Chem. Phys. 16, 20398 (2014)

Spatially resolving valley quantum interference of a donor in silicon
J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg, and S. Rogge
Nature Mater. 13, 605 (2014)

Probing the spin states of a single acceptor atom
J. van der Heijden, J. Salfi, J.A. Mol, J. Verduijn, G.C. Tettamanzi, A.R. Hamilton, N. Collaert, and S. Rogge
Nano Lett. 14(3), 1492 (2014)

Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy
J. Zemen, J. Mašek, J. Kučera, J.A. Mol, P. Motloch, and T. Jungwirth
of Magn. Magn. Mater. 356, 87 (2014)

2008-2013

Transport through a single donor in p-type silicon
J.A. Miwa, J.A. Mol, J.Salfi, M. Simmons, and S. Rogge
Appl. Phys. Let. 103, 043106 (2013)

Interplay between dielectric mismatch and quantum confinement for ultrashallow dopants
J.A. Mol, J. Salfi, J. A. Miwa, M. Y. Simmons, and S. Rogge
Phys. Rev. B. 87, 245471 (2013)

Querying a quasi-classical Oracle: One bit function identification problem implemented in a single atom transistor
B. Fresch, J. Verduijn, J.A. Mol, S. Rogge, and F. Remacle
EPL (Europhysics Letters) 99, 28004 (2012)

Balanced ternary addition using a gated silicon nanowire
J.A. Mol, J. van der Heijden, J. Verduijn, M. Klein, F. Remacle, and S. Rogge
Appl. Phys. Lett. 99, 263109 (2011)

Integrated logic circuits using single-atom transistors
J.A. Mol, J. Verduijn,R. D. Levine, F. Remacle, and S. Rogge
Proc. Natl. Acad. Sci. 108, 13969-13972 (2011)

Drain current modulation in a nanoscale MOSFET channel by single dopant implantation
B.C. Johnson, A.D.C. Alves, S. Thompson, C. Yang, D.N. Jamieson, J. Verduijn,
J.A. Mol, G.C. Tettamanzi, S. Rogge, R. Wacquez, and M. Vinet
Appl. Phys. Lett. 96, 264102 (2010)

Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full adder logic
Y. Yan, J.A. Mol, J. Verduijn, S. Rogge, R.D. Levinec, and F. Remacle
Phys. Chem. C 114, 20380 (2010)

Ternary logic implemented on a single dopant atom field effect silicon transistor
M. Klein, J.A. Mol, J. Verduijn, G.P. Lansbergen, S. Rogge, R.D. Levine, and F. Remacle
Appl. Phys. Lett., 96, 043107 (2010)

A low temperature surface preparation method for STM nano-lithography on Si(100)
J.A. Mol, S.P.C. Beentjes, and S.Rogge
Appl. Surf. Sci. 256, 5042 (2010)

Reconfigurable logic devices on a single dopant atom – operation up to a full adder by using electrical spectroscopy
M. Klein, G.P. Lansbergen, J.A. Mol, S. Rogge, R.D. Levine, and F. Remacle
ChemPhysChem 10, 162 (2009)

Pulsed field induced magnetization switching in (Ga,Mn)As
Z. Li, J.A. Mol, L. Lagae, G. Borghs, R. Mertens, and W. Van Roy
Appl. Phys. Lett. 92, 112513 (2008)